H55N25HW

Features ·Low RDS(on) & FOM ·Extremely low switching loss ·Enhanced Body diode dv/dt capability ·Enhanced Avalanche Ruggedness Applications: ·Synchronous Rectification in SMPS ·Hard Switching and High Speed Circuit ·Power Tools ·Motor Control ·UPS

文件：488.36 Kbytes 页数：5 Pages

HUIXIN

慧芯电子

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=55A@ TC=25℃ ·Drain Source Voltage- : VDSS=250V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.04Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

文件：361.43 Kbytes 页数：2 Pages

ISC

无锡固电

250V N-Channel MOSFET

250V N-Channel MOSFET

文件：811.88 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

FBGA

SKHYNIX

上传：深圳庞田科技有限公司

BGA

SKHYNIX

上传：深圳庞田科技有限公司