Trench Gate IGBT

Features: • 650V trench gate/field termination process • Very low Vce(sat) • Low switching loss • Positive temperature coefficient in Vce(sat) • Lead Free Applications: • EV Charging • Uninterruptible Power Supply (UPS) • Inverters • Load Switch

文件：734.14 Kbytes 页数：8 Pages

HUIXIN

慧芯电子

Trench Gate IGBT

Features: • 650V trench gate/field termination process • Very low Vce(sat) • Low switching loss • Positive temperature coefficient in Vce(sat) • Lead Free Applications: • EV Charging • Uninterruptible Power Supply (UPS) • Inverters • Load Switch

文件：746.09 Kbytes 页数：8 Pages

HUIXIN

慧芯电子

Trench Gate IGBT

Features : • 650V trench gate/field termination process • Very low Vce(sat) • Low switching loss • Positive temperature coefficient in Vce(sat) • EV Chargin • Lead Free Applications: g • Uninterruptible Power Supply (UPS) • Inverters • Load Switch • AEC-Q101qualified

文件：797.69 Kbytes 页数：8 Pages

HUIXIN

慧芯电子

650V Field Stop IGBT

General Description This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides high switching series and excellent quality. This device is for PFC, UPS & Inverter applications. Features  High Speed Switching & Low Power Loss  V = 1.95V @ I = 40A

文件：1.5971 Mbytes 页数：9 Pages

MGCHIP