H28F008SC-V中文资料夏普数据手册PDF规格书

FEATURES

• Smart 5 technology

– 5 V VCC

– 5 V or 12 V VPP

• High performance read access time

LH28F008SC-V85/SCH-V85

– 85 ns (5.0±0.25 V)/90 ns (5.0±0.5 V)

LH28F008SC-V12/SCH-V12

– 120 ns (5.0±0.5 V)

• Enhanced automated suspend options

– Byte write suspend to read

– Block erase suspend to byte write

– Block erase suspend to read

• Enhanced data protection features

– Absolute protection with VPP = GND

– Flexible block locking

– Block erase/byte write lockout during power

transitions

• SRAM-compatible write interface

• High-density symmetrically-blocked architecture

– Sixteen 64 k-byte erasable blocks

• Enhanced cycling capability

– 100 000 block erase cycles

– 1.6 million block erase cycles/chip

• Low power management

– Deep power-down mode

– Automatic power saving mode decreases ICC

in static mode

• Automated byte write and block erase

– Command user interface

– Status register

• ETOXTM* V nonvolatile flash technology

• Packages

– 40-pin TSOP Type I (TSOP040-P-1020)

Normal bend/Reverse bend

– 44-pin SOP (SOP044-P-0600)

– 48-ball CSP (FBGA048-P-0608)

* ETOX is a trademark of Intel Corporation.