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H27U4G8F2DTR-BI中文资料PDF规格书
H27U4G8F2DTR-BI规格书详情
Summary Description
H27(U_S)4G8_6F2D series is a 512Mx8bit with spare 16Mx8 bit capacity. The device is offered in 3.0/1.8 Vcc Power Supply, and with x8 and x16 I/O interface Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased.
The device contains 4096 blocks, composed by 64 pages. Memory array is split into 2 planes, each of them consisting of 2048 blocks. Like all other 2KB - page NAND Flash devices, a program operation allows to write the 2112-byte page in typical 200us(3.3V) and an erase operation can be performed in typical 3.5ms on a 128K-byte block. In addition to this, thanks to multi-plane architecture, it is possible to program 2 pages at a time (one per each plane) or to erase 2 blocks at a time (again, one per each plane). As a consequence, multi-plane architecture allows program
time to be reduced by 40 and erase time to be reduction by 50. In case of multi-plane operation, there is small degradation at 1.8V application in terms of program/erase time.
产品属性
- 型号:
H27U4G8F2DTR-BI
- 制造商:
HYNIX
- 制造商全称:
Hynix Semiconductor
- 功能描述:
4 Gbit(512M x 8 bit) NAND Flash
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
HYNIX(海力士) |
21+ |
TSSOP48 |
3800 |
询价 | |||
HYNIX/海力士 |
23+ |
NA/ |
935 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
HYNIX |
2016+ |
TSOP |
5000 |
全新原装现货,只售原装,假一赔十! |
询价 | ||
HYNIX |
2020+ |
FBGA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
SKHynix |
21+ |
TSOP48 |
35200 |
一级代理/放心采购 |
询价 | ||
SKHynix |
23+ |
TSOP48 |
20000 |
原厂原装正品现货 |
询价 | ||
SKHYNIX |
23+ |
TSOP |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
HYNIX/海力士 |
NEW+ |
TSOP48 |
5956 |
询价 | |||
SKHYNIX |
18+ |
TSOP |
960 |
只做正品,原装现货实单来谈 |
询价 | ||
SKHYNIX/海力士 |
TSOP48 |
265209 |
假一罚十原包原标签常备现货! |
询价 |