丝印：H20T65T；Package：TO-220；Trench Gate IGBT

Features: • 650V trench gate/field termination process • Very low Vce(sat) • Low switching loss • Positive temperature coefficient in Vce(sat) • Lead Free Applications: • EV Charging • Uninterruptible Power Supply (UPS) • Inverters • Load Switch

文件：871.29 Kbytes 页数：9 Pages

HUIXIN

慧芯电子

Trench Gate IGBT

Features: • 650V trench gate/field termination process • Very low Vce(sat) • Low switching loss • Positive temperature coefficient in Vce(sat) • Lead Free Applications: • EV Charging • Uninterruptible Power Supply (UPS) • Inverters • Load Switch

文件：880.31 Kbytes 页数：9 Pages

HUIXIN

慧芯电子

Control Integrated POwer System

文件：1.2699 Mbytes 页数：17 Pages

INFINEON

英飞凌

Schottky Barrier Diode

文件：1.05853 Mbytes 页数：5 Pages

ROHM

罗姆