PNP SILICON TRANSISTOR

GENERAL PURPOSE AMPLIFIER AND LOW NOISE AMPLIFIER APPLICATIONS

文件：105.47 Kbytes 页数：1 Pages

HUASHAN

华汕电子器件

5-Dot Red/Green LED Level Meter

文件：113.39 Kbytes 页数：4 Pages

SANYO

三洋

SMALL SIGNAL GaAs FET?

DESCRIPTION The MGF1423B, low-noise GaAs FET with an N-channel Schottky gate, is designed for use in S to Ku band amplifiers. FEATURES ● High linear power gain GLP = 11 dB (TYP.) @ f = 12 GHz ● High output power at 1 dB gain compression P1dB = 13dBm (TYP.) @ f = 12 GHz ● High reliabil

文件：261.07 Kbytes 页数：5 Pages

MITSUBISHI

三菱电机

RF & MICROWAVE TRANSISTORS 800-960MHz BASE STATION APPLICATIONS

DESCRIPTION The SD1423 is a gold metallization epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation for cellular base station applications. The SD1423 is designed as a medium power output device or as the driver for the SD1424. ■

文件：54.76 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体