ISF1266

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=110A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=22mΩ(Max)@VGS=10V APPLICATIONS ·SwitchModePowerSupply(SMPS) ·UninterruptiblePowerSupply(UPS) ·PowerFactorCorrection(PFC)

KTA1266

SiliconPNPtransistorinaTO-92PlasticPackage

Descriptions SiliconPNPtransistorinaTO-92PlasticPackage. Features ExcellenthFElinearity,lownoise,complementarypairwithKTC3198. Applications Generalpurposeandswitchingapplication.

KTA1266

PNPPlasticEncapsulatedTransistor

KTA1266

TRANSISTOR(PNP)

FEATURES Powerdissipation PCM:0.625W(Tamb=25℃) Collectorcurrent ICM:-0.15A Collector-basevoltage V(BR)CBO:-50V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

KTA1266

PNPPlasticEncapsulatedTransistor

FEATURE ●ExcellenthFELinearity ●LowNoise ●ComplementarytoKTC3198

KTA1266

EPITAXIALPLANARPNPTRANSISTOR

KTA1266

EPITAXIALPLANARPNPTRANSISTOR(GENERALPURPOSE,SWITCHING)

GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES •ExcellenthFELinearity :hFE(2)=80(Typ.)atVCE=-6V,IC=-150mA :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). •LowNoise:NF=1dB(Typ.).atf=1kHz. •ComplementarytoKTC3198.

KTA1266

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●ExcellenthFELinearity ●LowNoise ●ComplementarytoKTC3198

KTA1266

TO-92Plastic-EncapsulateTransistors(PNP)

TRANSISTOR(PNP) FEATURES ●ExcellenthFELinearity ●LowNoise ●ComplementarytoKTC3198

KTA1266

PNPPlastic-EncapsulateTransistor

PNPPlastic-EncapsulateTransistor P/bLead(Pb)-Free FEATURES: •ExcellenthFELinearity •Lownoise