H11B1M中文资料仙童半导体数据手册PDF规格书

描述 Description

The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.

特性 Features

■ High sensitivity to low input drive current

■ Meets or exceeds all JEDEC Registered Specifications

■ VDE 0884 approval available as a test option

– add option .300. (e.g., 4N29.300)

Applications

■ Low power logic circuits

■ Telecommunications equipment

■ Portable electronics

■ Solid state relays

■ Interfacing coupling systems of different potentials and impedances