H11AA814B.3SD中文资料仙童半导体数据手册PDF规格书

DESCRIPTION

The H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package.

The H11A617 and H11A817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.

FEATURES

• Compact 4-pin package

• Current transfer ratio in selected groups:

H11AA814: 20-300 H11A817: 50-600

H11AA814A: 50-150 H11A817A: 80-160

H11A617A: 40-80 H11A817B: 130-260

H11A617B: 63-125 H11A817C: 200-400

H11A617C: 100-200 H11A817D: 300-600

H11A617D: 160-320

• Minimum BVCEO of 70V guaranteed

APPLICATIONS

H11AA814 Series

• AC line monitor

• Unknown polarity DC sensor

• Telephone line interface

H11A617 and H11A817 Series

• Power supply regulators

• Digital logic inputs

• Microprocessor inputs