丝印：H07；Package：SOT765-1；Triple buffer with open-drain outputs

1. General description The 74HC3G07; 74HCT3G07 is a triple buffer with open-drain outputs. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC. 2. Features and benefits • Wide supply voltage range from 2.0 V to 6.0 V

文件：209.87 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：H07；Package：SOT765-1；Triple buffer with open-drain outputs

1. General description The 74HC3G07-Q100; 74HCT3G07-Q100 is a triple buffer with open-drain outputs. Inputs include clamp diodes that enable the use of current limiting resistors to interface inputs to voltages in excess of VCC. This product has been qualified to the Automotive Electronics Cou

文件：209.18 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：H07；Package：SOT505-2；Triple buffer with open-drain outputs

1. General description The 74HC3G07; 74HCT3G07 is a triple buffer with open-drain outputs. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC. 2. Features and benefits • Wide supply voltage range from 2.0 V to 6.0 V

文件：209.87 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：H07；Package：SOT505-2；Triple buffer with open-drain outputs

1. General description The 74HC3G07-Q100; 74HCT3G07-Q100 is a triple buffer with open-drain outputs. Inputs include clamp diodes that enable the use of current limiting resistors to interface inputs to voltages in excess of VCC. This product has been qualified to the Automotive Electronics Cou

文件：209.18 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：H07；Package：VSSOP8；Triple buffer with open-drain outputs

文件：210.26 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：H07；Package：TSSOP8；Triple buffer with open-drain outputs

文件：210.26 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：H075T；Package：TO-252；N-Channel MOSFET uses advanced SGT technology

文件：2.78259 Mbytes 页数：5 Pages

DOINGTER

杜因特

丝印：H070N；Package：TO-220F；N-Channel MOSFET uses advanced trench technology

文件：1.62367 Mbytes 页数：5 Pages

DOINGTER

杜因特

N-Channel Power Field Effect Transistor

Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient

文件：61.51 Kbytes 页数：5 Pages

HSMC

华昕

N-Channel Power Field Effect Transistor

Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient

文件：61.51 Kbytes 页数：5 Pages

HSMC

华昕