Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO-247 long leads package

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performances are optimized both in conduction and switching energies for hard switching application. In this configuration, it has been co-packed with a high ruggedness rectifie • Maximum junction temperature: TJ = 175 °C \n• Co-packed with high ruggedness rectifier diode \n• Tight parameter distribution \n• Positive VCE(sat) temperature coefficient;

ST

意法半导体

TI

德州仪器

上传：深圳市安富世纪电子有限公司

TI

德州仪器

上传：深圳市安富世纪电子有限公司