GWA40MS120DF4AG中文资料意法半导体数据手册PDF规格书

厂商型号	GWA40MS120DF4AG
功能描述	Automotive-grade trench gate field-stop, 1200 V, 40 A, low-loss MS series IGBT in a TO-247 long leads package
丝印标识	G40MS120DF4AG
封装外壳	TO-247
文件大小	340.6 Kbytes
页面数量	15 页
生产厂商	STMicroelectronics
企业简称	STMICROELECTRONICS【意法半导体】
中文名称	意法半导体集团官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-8-5 10:40:00
人工找货	GWA40MS120DF4AG价格和库存，欢迎联系客服免费人工找货

特性 Features

• AEC-Q101 qualified

• 8 μs of short-circuit withstand time at VCC = 800 V, VGE = 15 V,

TJ (start) = 175 °C

• VCE(sat) = 1.95 V (typ.) @ IC = 40 A

• Tight parameter distribution

• Positive VCE(sat) temperature coefficient

• Low thermal resistance

Applications

• Auxiliary loads

• Thermal management

• PTC heaters

描述 Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop

structure. The device is part of the MS series IGBTs, which represent an

evolution of low-loss M series specifically designed for inverter system thanks to the

outstanding short-circuit capability at high bus voltage value. Furthermore, the slightly

positive VCE(sat) temperature coefficient and very tight parameter distribution result in

safer paralleling operation.