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．The GW 2164 is a GaAs MMIC DPDT switch in a DFN 1.5mmx1.5mm 6 lead plastic package. \n．The GW2164 features low insertion loss, high isolation and positive voltage operation with 2 controls. Typical applications are for IEEE WLAN 802.11 a/b/g/n system or systems operating up to 6.0GHz that employs t ．WLAN 802.11a/b/g/n Applications\n．Low Insertion Loss：0.5dB@ 2.4~2.5GHz\n0.7dB@ 4.9~6.0GHz\n．High Isolation：26dB@2.4~2.5GHz\n17dB@4.9~6.0GHz\n．DFN 1.5mmx1.5mm 6 Lead Green Package\n0.5μm GaAs pHEMT ProcessLow Cost and Good Reliability Performance;

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Silicon N Channel Power MOS FET Power Switching

Silicon N Channel Power MOS FET Power Switching Features •  Capable of 4.5 V gate drive •  Low drive current •  High density mounting •  Low on-resistance    RDS(on) = 2.5 mΩtyp. (at VGS= 10 V)

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Silicon N Channel Power MOS FET Power Switching

文件：90.58 Kbytes 页数：8 Pages

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Silicon N Channel Power MOS FET Power Switching

文件：90.58 Kbytes 页数：8 Pages

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