TeSys GV2 & GV3 - auxiliary contact - 1 NC 1NO (fault)

文件：114.88 Kbytes 页数：3 Pages

SCHNEIDER

施耐德

辅助触点, 2个触点, 1 常闭 + 1 常开, 240 V 直流、690 V 交流, 侧面安装, 螺钉接端, GVAD系列

Schneider

施耐德

1.0 - 1.5 GHz Low Noise Amplifier

文件：17.14 Kbytes 页数：1 Pages

HBH

Silicon P Channel MOS FET Series Power Switching / Over Temperature Shut-down Capability

Features This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over

文件：53.89 Kbytes 页数：10 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET Series Power Switching

Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying o

文件：88.3 Kbytes 页数：8 Pages

RENESAS

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