HER253G

PlasticHigh-EfficiencyRectifiers

INA253

HighVoltage,Bidirectional,Zero-Drift,Current-ShuntMonitorwithIntegrated2-m廓PrecisionLowInductiveShuntResistor

INA253

HighVoltage,Bidirectional,Zero-Drift,Current-ShuntMonitorWithIntegrated,2-m(ohm),Precision,LowInductiveShuntResistor

IQS253

Configurable3ChannelDYCALCapacitiveSensorwithAutomaticCompensation

IRF253

N-CHANNELPOWERMOSFETS

FEATURES •LowRds(on) •ImprovedInductiveruggedness •Excellenthighvoltagestability •Fastswitchingtimes •Ruggedpolysillcongatecellstructure •LowInputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability •TO-3package(Highvoltage)

IRF253

HighVoltagePowerMOSFETDieN-ChannelEnhancementModeHighRuggednessSeries

FEATURES: •Fastswitchingtimes •LowRDS(on)HDMOS™process •Ruggedpolysilicongatecellstructure •Excellenthighvoltagestability •Lowinputcapacitance •Improvedhightemperaturereliability APPLICATIONS: •Switchingpowersupplies •Motorcontrols •AudioAmplifiers •Invert

IRF253

N-CHANNELPOWERMOSFETS

FEATURES •LowRds(on))athighvoltage •ImprovedInductiveruggedness •Excellenthighvoltagestability •Fastswitchingtimes •Ruggedpolysillcongatecellstructure •LowInputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability •TO-3package(Highv

IRF253

N-CHANNEPOWERMOSFETS

FEATURES •LowRds(on))athighvoltage •ImprovedInductiveruggedness •Excellenthighvoltagestability •Fastswitchingtimes •Ruggedpolysillcongatecellstructure •LowInputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability •TO-3package(Highv

IRF253

NanosecondSwitchingSpeed

IRFP253

N-Channel(HexfetTransistors)