N - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

文件：319.45 Kbytes 页数：4 Pages

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文件：303.21 Kbytes 页数：4 Pages

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勤益投资控股

N - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

ETL

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)

Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications ● Small footprint due to small and thin package ● Low drain−source ON resistance: RDS (ON) = 30 mΩ (typ.) ● High forward transfer admittance: |Yfs| = 10 S (typ.) ● Low leakage current: IDSS = 10 µA (max

文件：312.48 Kbytes 页数：7 Pages

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

文件：362.44 Kbytes 页数：7 Pages

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High performance, Low Cost 20 pin OTP

Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.2 S (typ.) • Low leakage current: ID

文件：305.16 Kbytes 页数：2 Pages

TOSHIBA

东芝