Thermally-Enhanced High Power RF GaN on SiC HEMT 50 W, 48 V, 2515 – 2675 MHz

Description The GTRA260502M is a 50-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermallyenhanced DFN SMD package. Features • GaN on SiC HEMT technology • T

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