丝印：GT135N10；Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT135N10D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：986.32 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

100V N Channel SGT MOSFET

Power MOSFETs find widespread use across various applications due to their low ON resistance, making them particularly appealing. By minimizing power dissipation, they contribute to cost reduction, smaller form factors, and less cooling requirements, resulting in significant enhancements for electro

GOFORD

谷峰半导体

丝印：GT135N10；Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT135N10D3A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：859.73 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

IGBT模块

SILVERMICRO/银茂微

上传：深圳市芯纬度科技有限公司

IGBT模块

SILVERMICRO/银茂微

上传：深圳市芯纬度科技有限公司