丝印：GT035N10；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The GT035N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：989.16 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

N-Channel PowerTrench짰 MOSFET 100V, 214A, 3.5m廓

文件：291.96 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel Enhancement Mode Power MOSFET

Description The GT035N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.046329 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT035N10MA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.13792 Mbytes 页数：6 Pages

GOFORD

谷峰半导体