丝印：GT015N10；Package：TOLL-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT015N10TLA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：963.5 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

MOSFET - Power, Single N-Channel 100 V, 12.2 m, 54 A

文件：172.61 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel 100 V, 12.2 m, 47.1 A

文件：198.95 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel 100 V, 12.9 m, 42 A

Features • Small Footprint (3.3x3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Primary DC−DC MOSFET • Synchronous Rectifier in DC−DC and AC−DC • Motor Drive • These Devices are Pb−Free, Halogen Free/BFR Free and ar

文件：325.76 Kbytes 页数：9 Pages

ONSEMI

安森美半导体