IRFH5006PBF

HEXFETPowerMOSFET

FeaturesandBenefits Features LowRDSon(≤4.1mΩ) LowThermalResistancetoPCB(≤0.8°C/W) 100Rgtested LowProfile(≤0.9mm) Industry-StandardPinout CompatiblewithExistingSurfaceMountTechniques RoHSCompliantContainingnoLead,noBromideandnoHalo

IRFH5006PBF

SecondarySideSynchronousRectification

IRFH5006TRPBF

HEXFETPowerMOSFET

FeaturesandBenefits Features LowRDSon(≤4.1mΩ) LowThermalResistancetoPCB(≤0.8°C/W) 100Rgtested LowProfile(≤0.9mm) Industry-StandardPinout CompatiblewithExistingSurfaceMountTechniques RoHSCompliantContainingnoLead,noBromideandnoHalo

ISS5006

SchottkyDiode

FEATURES ·Extremelylowswitchinglosses ·LowIrmvalues ·Improvedthermalcircuitoperation ·Highreliabilitycircuitoperation ·Lowvoltagepeaksforreducedprotectioncircuits ·Lownoiseswitching Applications ·Rectifiersinswitchmodepowersupplies ·Freewheelingdiodeinlowvolta

KBJ5006

Single-PhaseBridgeRectifier,50A

KBPC5006

TECHNICALSPECIFICATIONSOFSINGLE-PHASESILICONBRIDGERECTIFIER

FEATURES *MetalcaseforMaximumHeatDissipation *Surgeoverloadrating-400Amperes *Lowforwardvoltagedrop

KBPC5006

SILICONBRIDGERECTIFIERS

PRV:50-1000Volts Io:50Amperes FEATURES: *Highcasedielectricstrength *Highsurgecurrentcapability *Highreliability *Highefficiency *Lowreversecurrent *Lowforwardvoltagedrop *Pb/RoHSFree

KBPC5006

HIGHCURRENT15,25,35,50AMPS.SINGLEPHASEBRIDGERECTIFIERS

KBPC5006

50AHIGHCURRENTSINGLE-PHASEBRIDGERECTIFIER

Features ●DiffusedJunction ●LowReverseLeakageCurrent ●LowPowerLoss,HighEfficiency ●ElectricallyIsolatedMetalCasefor MaximumHeatDissipation ●CasetoTerminalIsolationVoltage2500V ●RecognizedFile#E157705

KBPC5006

SINGLEPHASE15/25/35/50AMPS.SILICONBRIDGERECTIFIERS

VoltageRange50to1000VoltsCurrent50Amperes FEATURES *ULRecognizedFile#230084 *Surgeoverloadrating-400Amperesepeak *Lowforwardvoltagedrop *Mountingposition:Any *Electricallyisolatedbase-1800Volts *Solderable.25FASTONterminals *MaterialsusedcarriesU/Lrecog