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GS881E36AT-200中文资料PDF规格书

GS881E36AT-200
厂商型号

GS881E36AT-200

功能描述

512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs

文件大小

839.13 Kbytes

页面数量

37

生产厂商 GSI Technology
企业简称

GSI

中文名称

GSI Technology官网

原厂标识
数据手册

下载地址一下载地址二

更新时间

2024-6-16 18:37:00

GS881E36AT-200规格书详情

Functional Description

Applications

The GS881E18//36T is a 9,437,184-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.

1.10 9/2000Features

• FT pin for user-configurable flow through or pipelined

operation

• Dual Cycle Deselect (DCD) operation

• IEEE 1149.1 JTAG-compatible Boundary Scan

• On-chip write parity checking; even or odd selectable

• 3.3 V +10/–5 core power supply

• 2.5 V or 3.3 V I/O supply

• LBO pin for Linear or Interleaved Burst mode

• Internal input resistors on mode pins allow floating mode pins

• Default to Interleaved Pipeline mode

• Byte Write (BW) and/or Global Write (GW) operation

• Common data inputs and data outputs

• Clock Control, registered, address, data, and control

• Internal self-timed write cycle

• Automatic power-down for portable applications

• 100-lead TQFP package

产品属性

  • 型号:

    GS881E36AT-200

  • 制造商:

    GSI

  • 制造商全称:

    GSI Technology

  • 功能描述:

    512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs

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