首页>GS881E18BGD-150>规格书详情
GS881E18BGD-150中文资料PDF规格书
GS881E18BGD-150规格书详情
Functional Description
Applications
The GS881E18B(T/D)/GS881E32B(D)/GS881E36B(T/D) is a 9,437,184-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.
Features
• FT pin for user-configurable flow through or pipeline operation
• Dual Cycle Deselect (DCD) operation
• IEEE 1149.1 JTAG-compatible Boundary Scan
• 2.5 V or 3.3 V +10/–10 core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 100-lead TQFP and 165-bump BGA packages
产品属性
- 型号:
GS881E18BGD-150
- 制造商:
GSI
- 制造商全称:
GSI Technology
- 功能描述:
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs