GS841E18AB-100中文资料GSI数据手册PDF规格书

Functional Description

The GS841E18A is a 256K x 18 high performance synchronous DCD SRAM with integrated Tag RAM comparator. A 2-bit burst counter is included to provide burst interface with PentiumTM and other high performance CPUs.

Features

• 3.3 V +10/–5 core power supply, 2.5 V or 3.3 V I/O supply

• Dual Cycle Deselect (DCD)

• Intergrated data comparator for Tag RAM application

• FT mode pin for flow through or pipeline operation

• LBO pin for Linear or Interleave (PentiumTM and X86) Burst mode

• Synchronous address, data I/O, and control inputs

• Synchronous Data Enable (DE)

• Asynchronous Output Enable (OE)

• Asynchronous Match Output Enable (MOE)

• Byte Write (BWE) and Global Write (GW) operation

• Three chip enable signals for easy depth expansion

• Internal self-timed write cycle

• JTAG Test mode conforms to IEEE standard 1149.1

• JEDEC-standard 100-lead TQFP package and 119-BGA

• Pb-Free 100-lead TQFP package available