GS84018AB-100

256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs

GS84018AB-100

256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs; • FT pin for user configurable flow through or pipelined operation.\n• Single Cycle Deselect (SCD) Operation.\n• 3.3V +10%/-5% Core power supply\n• 2.5V or 3.3V I/O supply.\n• LBO pin for linear or interleaved burst mode.\n• Internal input resistors on mode pins allow floating mode pins.\n• Default to Interleaved Pipelined Mode.\n• Byte write (BW) and/or global write (GW) operation.\n• Common data inputs and data outputs.\n• Clock Control, registered, address, data, and control.\n• Internal Self-Timed Write cycle.\n• Automatic power-down for portable applications.\n• JEDEC standard 100-lead TQFP or 119 Bump BGA package.Applications\n  The GS84018/32/36 is a 4,718,592 bit (4,194,304 bit for x32 version) high performance synchronous SRAM with a 2 bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPU’s, the device now finds application in synchronous SRAM applications ranging from DSP main store to networking chip set support. The GS84018/32/36 is available in a JEDEC standard 100-lead TQFP or 119 Bump BGA package.;

GS84018AB-100I

100MHz 12ns 256K x 18 4Mb sync burst SRAM;

GS84018AB-100I

256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs

GS84018AB-150

256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs

GS84018AB-150I

256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs

GS84018AB-166

256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs

GS84018AB-166I

256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs

GS84018AB-180

256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs

GS84018AB-180I

256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs