GS816218B中文资料GSI数据手册PDF规格书
GS816218B规格书详情
Functional Description
Applications
The GS816218(B/D)/GS816236(B/D)/GS816272(C) is an 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.
Features
• FT pin for user-configurable flow through or pipeline operation
• Single/Dual Cycle Deselect selectable
• IEEE 1149.1 JTAG-compatible Boundary Scan
• ZQ mode pin for user-selectable high/low output drive
• 2.5 V or 3.3 V +10/–10 core power supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to SCD x18/x36 Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 119-, 165-, and 209-bump BGA package
产品属性
- 型号:
GS816218B
- 制造商:
GSI Technology
- 功能描述:
SRAM SYNC QUAD 3.3V 18MBIT 1MX18 7.5NS/3.8NS 119FBGA - Trays
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
GSI Technology |
2022+ |
原厂原包装 |
8600 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 |
相关库存
更多- GS8161Z36T-150I
- GS8161Z36T-133I
- GS8161Z36T-225T
- GS816218
- GS8161Z36T-150
- GS8161Z36T-200I
- GS8161Z36T-166T
- GS816218BB
- GS816218B-250
- GS816218B-166
- GS816218B-250I
- GS816218B-133I
- GS816218B-225
- GS816218BB-200IV
- GS816218B-225I
- GS816218B-150I
- GS816218BB-200V
- GS816218B-133
- GS816218BB-200I
- GS816218BB-150I
- GS816218BB-150IV
- GS816218B-166I
- GS816218BB-200I
- GS816218BB-200
- GS816218BB-150I
- GS816218B-200
- GS816218BB-150
- GS816218BB-150
- GS816218BB-200
- GS816218B-150
- GS816218BB-150V
- GS816218B-200I