GS8161E36BD-250I中文资料GSI数据手册PDF规格书

Functional Description

Applications

The GS8161E18B(T/D)/GS8161E32B(D)/GS8161E36B(T/D) is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.

特性 Features

• FT pin for user-configurable flow through or pipeline operation

• Dual Cycle Deselect (DCD) operation

• IEEE 1149.1 JTAG-compatible Boundary Scan

• 2.5 V or 3.3 V +10/–10 core power supply

• 2.5 V or 3.3 V I/O supply

• LBO pin for Linear or Interleaved Burst mode

• Internal input resistors on mode pins allow floating mode pins

• Default to Interleaved Pipeline mode

• Byte Write (BW) and/or Global Write (GW) operation

• Internal self-timed write cycle

• Automatic power-down for portable applications

• JEDEC-standard 100-lead TQFP package

• RoHS-compliant 100-lead TQFP and 165-bump BGA packages available