首页 >GS8161E32BD-150>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
GS8161E32BD-150 | 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Functional Description Applications The GS8161E18B(T/D)/GS8161E32B(D)/GS8161E36B(T/D) is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now 文件:1.39199 Mbytes 页数:35 Pages | GSI | GSI | |
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Functional Description Applications The GS8161E18B(T/D)/GS8161E32B(D)/GS8161E36B(T/D) is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now 文件:1.39199 Mbytes 页数:35 Pages | GSI | GSI | ||
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Functional Description Applications The GS8161ExxB(T/D)-xxxV is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in sync 文件:1.39331 Mbytes 页数:35 Pages | GSI | GSI | ||
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Functional Description Applications The GS8161ExxB(T/D)-xxxV is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in sync 文件:1.39331 Mbytes 页数:35 Pages | GSI | GSI |
详细参数
- 型号:
GS8161E32BD-150
- 制造商:
GSI Technology
- 功能描述:
SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX32 7.5NS/3.8NS 165FBGA - Trays
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
GSI Technology |
2022+ |
原厂原包装 |
8600 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 |
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