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GS8160V32AT-333I中文资料PDF规格书
相关芯片规格书
更多- GS8160V18CT-300
- GS8160V18CGT-300
- GS8160V18CGT-333I
- GS8160V18CGT-250I
- GS8160V18AT-333I
- GS8160V32AT-300I
- GS8160V32AT-250I
- GS8160V32AT-200I
- GS8160V18CT-250I
- GS8160V18CT-300I
- GS8160V18CGT-333
- GS8160V32AT-150
- GS8160V18AT-350I
- GS8160V18CT-250
- GS8160V18AT-350
- GS8160V32AT-333
- GS8160V18CGT-250
- GS8160V32AT-200
GS8160V32AT-333I规格书详情
Functional Description
Applications
The GS8160V18/32/36AT is an 18,874,368-bit (16,777,216-bit for x32 version) high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.
Features
• FT pin for user-configurable flow through or pipeline operation
• Single Cycle Deselect (SCD) operation
• 1.8 V +10/–10 core power supply
• 1.8 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 100-lead TQFP package
产品属性
- 型号:
GS8160V32AT-333I
- 制造商:
GSI
- 制造商全称:
GSI Technology
- 功能描述:
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
GSI |
BGA |
2350 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
GSI |
22+ |
QFP |
2897 |
只做原装自家现货供应! |
询价 | ||
GSI |
22+ |
TQFP |
12245 |
现货,原厂原装假一罚十! |
询价 | ||
GSI |
21+ |
QFP |
6000 |
全新原装 现货 价优 |
询价 | ||
GS |
21+ |
QFP |
381 |
原装现货假一赔十 |
询价 | ||
GSI |
23+ |
NA |
2874 |
航宇科工半导体-中国航天科工集团战略合作伙伴! |
询价 | ||
GSI |
20+ |
TQFP |
9850 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
GSI |
2016+ |
TQFP |
6523 |
只做进口原装现货!或订货假一赔十! |
询价 | ||
GSI |
2022 |
QFP |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
GSI |
2023+ |
QFP |
6895 |
原厂全新正品旗舰店优势现货 |
询价 |