GS8160E18T-200中文资料GSI数据手册PDF规格书

Functional Description

Applications

The GS8160E18/32/36T is an 18,874,368-bit (16,777,216-bit for x32 version) high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.

特性 Features

• FT pin for user-configurable flow through or pipeline

operation

• Dual Cycle Deselect (DCD) operation

• 2.5 V or 3.3 V +10/–10 core power supply

• 2.5 V or 3.3 V I/O supply

• LBO pin for Linear or Interleaved Burst mode

• Internal input resistors on mode pins allow floating mode pins

• Default to Interleaved Pipeline mode

• Byte Write (BW) and/or Global Write (GW) operation

• Internal self-timed write cycle

• Automatic power-down for portable applications

• JEDEC-standard 100-lead TQFP package