256K x 8 2Mb Asynchronous SRAM

Features • Fast access time: 7, 8, 10, 12 ns • CMOS low power operation: 135/115/95/80 mA at minimum cycle time • Single 3.3 V power supply • All inputs and outputs are TTL-compatible • Fully static operation • Industrial Temperature Option: –40° to 85°C • Package line up J: 400 mil, 36-pi

文件：556.93 Kbytes 页数：13 Pages

GSI

256K x 8 2Mb Asynchronous SRAM

Features • Fast access time: 7, 8, 10, 12 ns • CMOS low power operation: 135/115/95/80 mA at minimum cycle time • Single 3.3 V power supply • All inputs and outputs are TTL-compatible • Fully static operation • Industrial Temperature Option: –40° to 85°C • Package line up J: 400 mil, 36-pi

文件：556.93 Kbytes 页数：13 Pages

GSI

256K x 8 2Mb Asynchronous SRAM

文件：317.92 Kbytes 页数：12 Pages

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256K x 8 2Mb Asynchronous SRAM

Features • Fast access time: 7, 8, 10, 12 ns • CMOS low power operation: 135/115/95/80 mA at minimum cycle time • Single 3.3 V power supply • All inputs and outputs are TTL-compatible • Fully static operation • Industrial Temperature Option: –40° to 85°C • Package line up J: 400 mil, 36-pi

文件：556.93 Kbytes 页数：13 Pages

GSI