GS65R060Q4A中文资料谷峰半导体数据手册PDF规格书

描述 Description

Silicon Carbide (SiC) MOSFET use a completely new

technology that provide superior switching performance and

higher reliability compared to Silicon. In addition, the low ON

resistance and compact chip size ensure low capacitance

and gate charge. Consequently, system benefits include

highest efficiency, faster operating frequency, increased

power density, reduced EMI, and reduced system size.

AEC-Q101 Qualified and PPAP Capable

特性 Features

l VDS 650V

l ID (at VGS = 15V) 42A

l RDS(ON) (at VGS = 15V) = 60mΩ

l High Blocking Voltage

l High Frequency Operation

l Low on-resistance

l Fast intrinsic diode with low reverse recovery

l 100% avalanche tested

Application

l Motor Drives

l Solar Inverters

l AC/DC converters

l DC/DC converters

l Uninterruptable power supplies