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H2011U

4&6TumblerPowerSwitchlocks

Features/Benefits •Positivedetent •Multi-poleandmulti-position •Snap-togetherassembly •Powerswitching

CK-COMPONENTS

C&K Components

HAF2011

SiliconNChannelMOSFETSeriesPowerSwitching

Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe

HitachiHitachi Semiconductor

日立日立公司

HAF2011

SiliconNChannelMOSFETSeriesPowerSwitching

Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

HAF2011(L)_15

SiliconNChannelMOSFETSeriesPowerSwitching

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

HAF2011L

SiliconNChannelMOSFETSeriesPowerSwitching

Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

HAF2011L

SiliconNChannelMOSFETSeriesPowerSwitching

Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe

HitachiHitachi Semiconductor

日立日立公司

HAF2011S

SiliconNChannelMOSFETSeriesPowerSwitching

Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe

HitachiHitachi Semiconductor

日立日立公司

HAF2011S

SiliconNChannelMOSFETSeriesPowerSwitching

Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

HBO2011NIL

LampsforPhotolithography

Description PerkinElmerOptoelectronicsisaleadingmanufacturerofmercuryshortarclampsranginginoutputpowerfrom1000to8000watts.Theselampsareusedintheproductionofprintedcircuitboards,liquidcrystaldisplaysandsemiconductors.TheHSHSerieslampsareusedworldwideinmi

PerkinElmer

PerkinElmer Optoelectronics

HBO2011W

LampsforPhotolithography

Description PerkinElmerOptoelectronicsisaleadingmanufacturerofmercuryshortarclampsranginginoutputpowerfrom1000to8000watts.Theselampsareusedintheproductionofprintedcircuitboards,liquidcrystaldisplaysandsemiconductors.TheHSHSerieslampsareusedworldwideinmi

PerkinElmer

PerkinElmer Optoelectronics

详细参数

  • 型号:

    GS2011MIPS

  • 制造商:

    GAINSPAN CORPORATION

  • 功能描述:

    GS2011M Series 2.4 GHz 15 dBm 3.6V 37 pin b/g/n Wi-Fi module w/PCB Trace Antenna

供应商型号品牌批号封装库存备注价格
GAINSPAN
19+/20+
Module
10601
询价
GAINSPAN
21+
MODULE
16000
英博尔一站式原装优质现货订货渠道商
询价
GAINSPAN
25+23+
Module
22790
绝对原装正品全新进口深圳现货
询价
GainSpan
20+
模块
1128
无线通信IC,大量现货!
询价
GainSpan
1935+
N/A
55
加我qq或微信,了解更多详细信息,体验一站式购物
询价
GAINSPAN
21+
Module
8000
全新原装 公司现货 价格优
询价
GAINSPAN
23+
Module
50000
全新原装正品现货,支持订货
询价
GAINSPAN
23+
MODULE
50000
全新原装正品现货,支持订货
询价
GainSpan
22+
NA
55
加我QQ或微信咨询更多详细信息,
询价
GAINSPAN
21+
Module
9850
只做原装正品假一赔十!正规渠道订货!
询价
更多GS2011MIPS供应商 更新时间2025-5-15 16:00:00