GS120R160Q4A芯片代码丝印对应型号-114ic电子网

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GS120R160	文件：1.32048 Mbytes Page：10 Pages	型号：GS120R160Q4A；Package：TO-247-4；N-Channel Silicon Carbide (SiC) MOSFET Description Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits inclu 文件：1.32048 Mbytes 页数：10 Pages	GOFORDGOFORD SEMICONDUCTOR 谷峰半导体	GOFORD
GS120R160	文件：1.32048 Mbytes Page：10 Pages	型号：GS120R160Q4A；Package：TO-247-4；N-Channel Silicon Carbide (SiC) MOSFET Description Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits inclu 文件：1.32048 Mbytes 页数：10 Pages	GOFORDGOFORD SEMICONDUCTOR 谷峰半导体	GOFORD

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GS120R160

文件：1.32048 Mbytes

Page：10 Pages

型号：GS120R160Q4A；Package：TO-247-4；N-Channel Silicon Carbide (SiC) MOSFET

Description Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits inclu

文件：1.32048 Mbytes 页数：10 Pages

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谷峰半导体

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