GS5M

型号：GS5M；Package：DO-214AB；Surface Mount General Purpose Rectifier GS5A Through GS5M

FEATURES ●Highefficiency ●Highcurrentcapability ●Highreliability ●Highsurgecurrentcapability ●Lowpowerloss ●Solderdip260°Cmax.10s,perJESD22-B106

GS65R030

型号：GS65R030Q4A；Package：TO-247-4；N-Channel Silicon Carbide (SiC) MOSFET

Description SiliconCarbide(SiC)MOSFETuseacompletelynew technologythatprovidesuperiorswitchingperformanceand higherreliabilitycomparedtoSilicon.Inaddition,thelowON resistanceandcompactchipsizeensurelowcapacitance andgatecharge.Consequently,systembenefitsinclu

GS65R045

型号：GS65R045Q4A；Package：TO-247-4；N-Channel Silicon Carbide (SiC) MOSFET

Description SiliconCarbide(SiC)MOSFETuseacompletelynew technologythatprovidesuperiorswitchingperformanceand higherreliabilitycomparedtoSilicon.Inaddition,thelowON resistanceandcompactchipsizeensurelowcapacitance andgatecharge.Consequently,systembenefitsinclu

GS65R060

型号：GS65R060Q4A；Package：TO-247-4；N-Channel Silicon Carbide (SiC) MOSFET

Description SiliconCarbide(SiC)MOSFETuseacompletelynew technologythatprovidesuperiorswitchingperformanceand higherreliabilitycomparedtoSilicon.Inaddition,thelowON resistanceandcompactchipsizeensurelowcapacitance andgatecharge.Consequently,systembenefitsinclu

GS8551

型号：GS8551-SR；Package：SOP-8；1.8MHZ Zero-Drift CMOS Rail-to-Rail IO Opamp with RF Filter

Features •Single-SupplyOperationfrom+1.8V~+5.5V •Rail-to-RailInput/Output •Gain-BandwidthProduct:1.8MHz(Typ@25°C) •LowInputBiasCurrent:20pA(Typ@25°C) •LowOffsetVoltage:30µV(Max@25°C) •QuiescentCurrent:180µAperAmplifier(Typ) •OperatingTemperature:-45°C~+12

GS8552

型号：GS8552-MR；Package：MSOP-8；1.8MHZ Zero-Drift CMOS Rail-to-Rail IO Opamp with RF Filter

Features •Single-SupplyOperationfrom+1.8V~+5.5V •Rail-to-RailInput/Output •Gain-BandwidthProduct:1.8MHz(Typ@25°C) •LowInputBiasCurrent:20pA(Typ@25°C) •LowOffsetVoltage:30µV(Max@25°C) •QuiescentCurrent:180µAperAmplifier(Typ) •OperatingTemperature:-45°C~+12

GS8552

型号：GS8552-SR；Package：SOP-8；1.8MHZ Zero-Drift CMOS Rail-to-Rail IO Opamp with RF Filter

Features •Single-SupplyOperationfrom+1.8V~+5.5V •Rail-to-RailInput/Output •Gain-BandwidthProduct:1.8MHz(Typ@25°C) •LowInputBiasCurrent:20pA(Typ@25°C) •LowOffsetVoltage:30µV(Max@25°C) •QuiescentCurrent:180µAperAmplifier(Typ) •OperatingTemperature:-45°C~+12

GS8554

型号：GS8554-SR；Package：SOP-14；1.8MHZ Zero-Drift CMOS Rail-to-Rail IO Opamp with RF Filter

Features •Single-SupplyOperationfrom+1.8V~+5.5V •Rail-to-RailInput/Output •Gain-BandwidthProduct:1.8MHz(Typ@25°C) •LowInputBiasCurrent:20pA(Typ@25°C) •LowOffsetVoltage:30µV(Max@25°C) •QuiescentCurrent:180µAperAmplifier(Typ) •OperatingTemperature:-45°C~+12

GS8554

型号：GS8554-TR；Package：TSSOP-14；1.8MHZ Zero-Drift CMOS Rail-to-Rail IO Opamp with RF Filter

Features •Single-SupplyOperationfrom+1.8V~+5.5V •Rail-to-RailInput/Output •Gain-BandwidthProduct:1.8MHz(Typ@25°C) •LowInputBiasCurrent:20pA(Typ@25°C) •LowOffsetVoltage:30µV(Max@25°C) •QuiescentCurrent:180µAperAmplifier(Typ) •OperatingTemperature:-45°C~+12

GS8A

型号：GS8A；Package：DO-214AB；Surface Mount General Purpose Rectifier GS8A Through GS8M

FEATURES •Highefficiency •Highcurrentcapability •Highreliability •Highsurgecurrentcapability •Lowpowerloss •SolderDip260°Cmax.10s,perJESD22-B106