700 V E-mode GaN transistor Datasheet

Features • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 8x8 mm PDFN package • RDS(on) = 95 mΩ • IDSmax,DC = 15.2 A / IDSmax,Pulse = 25 A • Ultra-low FOM • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive

文件：842.58 Kbytes 页数：17 Pages

GAN

700 V E-mode GaN transistor Datasheet

Features • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 8x8 mm PDFN package • RDS(on) = 95 mΩ • IDSmax,DC = 15.2 A / IDSmax,Pulse = 25 A • Ultra-low FOM • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive

文件：842.58 Kbytes 页数：17 Pages

GAN

700 V E-mode GaN transistor Datasheet

Features • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 8x8 mm PDFN package • RDS(on) = 95 mΩ • IDSmax,DC = 15.2 A / IDSmax,Pulse = 25 A • Ultra-low FOM • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive

文件：842.58 Kbytes 页数：17 Pages

GAN

CoolGaN ™晶体管 700 V G4，实现极致效率和可靠性

• 700 V e-mode power transistor\n• 850 V transient drain-to-source voltage\n• Bottom-cooled, 8x8 mm PDFN package\n• RDS(on) = 95 mΩ\n• IDSmax,DC = 15.2 A / IDSmax,Pulse = 25 A\n• Ultralow FOM\n• Gate drive requirements (0 V to 6 V)\n• High switching frequency (> 1 MHz)\n• Fast, controllable fall and;

Infineon

英飞凌