GS-065-011-6-LR中文资料GAN数据手册PDF规格书

特性 Features

• 700 V enhancement mode power transistor

• 850 V transient drain-to-source voltage

• Bottom-cooled, 8x8 mm PDFN package

• RDS(on) = 125 mΩ

• IDSmax,DC = 12.2 A / IDSmax,Pulse = 20 A

• Ultra-low FOM

• Simple gate drive requirements (0 V to 6 V)

• Transient tolerant gate drive (-20 V / +10 V)

• High switching frequency (> 1 MHz)

• Fast and controllable fall and rise times

• Reverse conduction capability

• Zero reverse recovery loss

• Source Sense (SS) pin for optimized gate drive

• RoHS 3 (6+4) compliant

Applications

• Power Adapters

• LED Lighting Drivers

• Fast Battery Charging

• Power Factor Correction

• Appliance Motor Drives

• Wireless Power Transfer

• Industrial Power Supplies

描述 Description

The GS-065-011-6-LR is an enhancement mode

GaN-on-Silicon power transistor. The properties of

GaN allow for high current, high voltage breakdown

and high switching frequency. GaN Systems

innovates with industry leading advancements such

as patented Island Technology® cell layout which

realizes high-current die and high yield. The GS065-011-6-LR is a bottom-side cooled transistor

that offers very low junction-to-case thermal

resistance for demanding high power applications.

These features combine to provide very high

efficiency power switching.