NJM8830

UltralowDistortion,UltralowNoise,Rail-to-RailOutputDualAudioOperationalAmplifier

FEATURES (V+/V−=±5V,Typicalvalue,Ta=25°C) UltralowDistortion0.000012typ.atf=1kHz UltralowNoise2.5nV/√Hztyp.atf=1kHz WideGainBandwidthProduct90MHztyp. HighSlewRate30V/μstyp HighOutputCurrent100mAtyp. OperatingVoltage±2.0Vto±5.25V SupplyCurre

OPA8830Q

InfraredLEDChip

OV8830

OV88308-megapixelproductbrief

PSU8830A

THAS231M150AA0C

PSU8830A

ACMotorStartCapacitorsNon-polarized,AluminumElectrolyticACMotorStartCapacitors

Non-polarized,AluminumElectrolyticACMotorStartCapacitors TheTypePSUisacompactnon-polar,dualvoltagerated,ACmotorstartcapacitorconstructedinaroundruggedbakelitecase.Toextendthelifeofrelaycontactswitches,thePSUcanbepurchasedwithoptionalbleederresist

PSU8830B

ACMotorStartCapacitorsNon-polarized,AluminumElectrolyticACMotorStartCapacitors

Non-polarized,AluminumElectrolyticACMotorStartCapacitors TheTypePSUisacompactnon-polar,dualvoltagerated,ACmotorstartcapacitorconstructedinaroundruggedbakelitecase.Toextendthelifeofrelaycontactswitches,thePSUcanbepurchasedwithoptionalbleederresist

PSU8830B

THAS231M150AA0C

QPL8830

75Ω21dBCATVAmplifier(5–1218MHz)

KeyFeatures •HighGain:21dBat1218MHz •5–1218MHzBW •OIP3:+45dBm,50–1218MHz •OP1dB:+24dBm,50–1218MHz •LowNoiseFigure:2.8dB,FullBand •ExcellentCompositeDistortion •pHEMTGaAsdevicetechnologies •CompactSize:8-pinSOIC •PowerConsumption: 5V,280mA

QPL8830SB

75Ω21dBCATVAmplifier(5–1218MHz)

KeyFeatures •HighGain:21dBat1218MHz •5–1218MHzBW •OIP3:+45dBm,50–1218MHz •OP1dB:+24dBm,50–1218MHz •LowNoiseFigure:2.8dB,FullBand •ExcellentCompositeDistortion •pHEMTGaAsdevicetechnologies •CompactSize:8-pinSOIC •PowerConsumption: 5V,280mA

QPL8830SR

75Ω21dBCATVAmplifier(5–1218MHz)

KeyFeatures •HighGain:21dBat1218MHz •5–1218MHzBW •OIP3:+45dBm,50–1218MHz •OP1dB:+24dBm,50–1218MHz •LowNoiseFigure:2.8dB,FullBand •ExcellentCompositeDistortion •pHEMTGaAsdevicetechnologies •CompactSize:8-pinSOIC •PowerConsumption: 5V,280mA