High Frequency Ceramic Capacitors – GQM Series

Features Size: 0603, 0805 and 1111 Voltage: 50, 100, 250 and 500VDC Cap Range: 0.1 to 100pF Internal Electrode: Cu Termination: Cu + Ni/Sn plating ESR: Ultra Low Power: High Power (>15W) Frequency Range: 500MHz –10GHz. High Q and Low ESR at VHF, UHF, and Microwave Frequencies Tolerance:

文件：1.39723 Mbytes 页数：30 Pages

MURATA

村田

1805–2200 MHz, 107 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR

Features  High terminal impedances for optimal broadband performance  Advanced high performance in--package Doherty  Able to withstand extremely high output VSWR and broadband operating conditions

文件：414.55 Kbytes 页数：18 Pages

恩XP

Airfast RF Power GaN Transistor

1 General description This 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1930 to 1995 MHz. This part is characterized and performance is guaranteed for ap

文件：491.07 Kbytes 页数：15 Pages

恩XP

High Frequency Ceramic Capacitors – GQM Series

Features Size: 0603, 0805 and 1111 Voltage: 50, 100, 250 and 500VDC Cap Range: 0.1 to 100pF Internal Electrode: Cu Termination: Cu + Ni/Sn plating ESR: Ultra Low Power: High Power (>15W) Frequency Range: 500MHz –10GHz. High Q and Low ESR at VHF, UHF, and Microwave Frequencies Tolerance:

文件：1.39723 Mbytes 页数：30 Pages

MURATA

村田

RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET

This 93 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1427 to 1517 MHz. Features • Advanced high performance in−package Doherty • Greater negative gate−source voltage range for improved Class C operation

文件：385.37 Kbytes 页数：17 Pages

恩XP

High Frequency Ceramic Capacitors – GQM Series

Features Size: 0603, 0805 and 1111 Voltage: 50, 100, 250 and 500VDC Cap Range: 0.1 to 100pF Internal Electrode: Cu Termination: Cu + Ni/Sn plating ESR: Ultra Low Power: High Power (>15W) Frequency Range: 500MHz –10GHz. High Q and Low ESR at VHF, UHF, and Microwave Frequencies Tolerance:

文件：1.39723 Mbytes 页数：30 Pages

MURATA

村田

Airfast RF Power GaN Transistor

1 General description This 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1930 to 1995 MHz. This part is characterized and performance is guaranteed for ap

文件：491.07 Kbytes 页数：15 Pages

恩XP

High Frequency Ceramic Capacitors – GQM Series

Features Size: 0603, 0805 and 1111 Voltage: 50, 100, 250 and 500VDC Cap Range: 0.1 to 100pF Internal Electrode: Cu Termination: Cu + Ni/Sn plating ESR: Ultra Low Power: High Power (>15W) Frequency Range: 500MHz –10GHz. High Q and Low ESR at VHF, UHF, and Microwave Frequencies Tolerance:

文件：1.39723 Mbytes 页数：30 Pages

MURATA

村田

High Frequency Ceramic Capacitors – GQM Series

Features Size: 0603, 0805 and 1111 Voltage: 50, 100, 250 and 500VDC Cap Range: 0.1 to 100pF Internal Electrode: Cu Termination: Cu + Ni/Sn plating ESR: Ultra Low Power: High Power (>15W) Frequency Range: 500MHz –10GHz. High Q and Low ESR at VHF, UHF, and Microwave Frequencies Tolerance:

文件：1.39723 Mbytes 页数：30 Pages

MURATA

村田

High Frequency Ceramic Capacitors – GQM Series

Features Size: 0603, 0805 and 1111 Voltage: 50, 100, 250 and 500VDC Cap Range: 0.1 to 100pF Internal Electrode: Cu Termination: Cu + Ni/Sn plating ESR: Ultra Low Power: High Power (>15W) Frequency Range: 500MHz –10GHz. High Q and Low ESR at VHF, UHF, and Microwave Frequencies Tolerance:

文件：1.39723 Mbytes 页数：30 Pages

MURATA

村田