GPT21N50资料datasheet下载供应商报价IXYS-114ic电子网

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IXFH21N50	文件：158 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Corporation	IXYS
IXFH21N50	文件：562.11 Kbytes Page：4 Pages	HiPerFETPowerMOSFETsMOSFETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Corporation	IXYS
IXFH21N50	文件：295.27 Kbytes Page：8 Pages	HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Corporation	IXYS
IXFH21N50	文件：336.77 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=21A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.25Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFH21N50F	文件：106.56 Kbytes Page：2 Pages	HiPerRFPowerMOSFETs HiPerRFPowerMOSFETs F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features •RFcapableMOSFETs •Doublemetalprocessforlowgateresistance •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance	IXYS IXYS Corporation	IXYS
IXFH21N50Q	文件：562.11 Kbytes Page：4 Pages	HiPerFETPowerMOSFETsMOSFETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Corporation	IXYS
IXFM21N50	文件：158 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Corporation	IXYS
IXFM21N50	文件：305.73 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=21A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.25Ω(Max)@VGS=10V DESCRIPTION ·MotorDrive,DC-DCConverter,PowerSwitch andSolenoidDrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFM21N50	文件：295.27 Kbytes Page：8 Pages	HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Corporation	IXYS
IXFT21N50F	文件：106.56 Kbytes Page：2 Pages	HiPerRFPowerMOSFETs HiPerRFPowerMOSFETs F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features •RFcapableMOSFETs •Doublemetalprocessforlowgateresistance •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance	IXYS IXYS Corporation	IXYS

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市近平电子有限公司	GPT21N50	CHAMPION	17	TO-220F	20000	CHAMPION原装现货,特价供应	询价
贸泽芯城（深圳）电子科技有限公司	GPT-230S-C-TU		23+		10000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市科芯源微电子有限公司	GPT6608A-002B-HL091	GENERALPL	25+	QFP	869	原装正品,假一罚十!	询价
上海金庆电子技术有限公司	GPTBLR11	CHERRY	新		5	全新原装货期两周	询价
上海市鑫鸿达电子	GPTBLR11	CHERRY	2022+		1	全新原装货期两周	询价
现代芯城（深圳）科技有限公司	GPTBLR11		24+	N/A	75000	一级代理-主营优势-实惠价格-不悔选择	询价
深圳市科雨电子有限公司	GPTBLS11	ZF	20+	开关元件	396	就找我吧!--邀您体验愉快问购元件!	询价
深圳市永贝尔科技有限公司	GPTC2V540MHERGT001	GALAXY	23+	NA	39960	只做进口原装,终端工厂免费送样	询价

更多GPT21N50供应商更新时间2025-5-23 15:34:00

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