POWER FIELD EFFECT TRANSISTOR

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers • Robust High Voltage Termination\r\n• Avalanche Energy Specified\r\n• Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode\r\n• Diode is Characterized for Use in Bridge Circuits\r\n• IDSS and VDS(on) Specified at Elevated Temperature\r\n• Isolated Mounting Hole Reduces M;

Champion

全鹏电子

HiPerFET Power MOSFETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

文件：158 Kbytes 页数：4 Pages

IXYS

艾赛斯

HiPerFET Power MOSFETs MOSFETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

文件：562.11 Kbytes 页数：4 Pages

IXYS

艾赛斯

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

文件：295.27 Kbytes 页数：8 Pages

IXYS

艾赛斯