GPR25L1603E中文资料16M-bit [x 1/x 2/x 4] CMOS MXSMIO®（Seriel Multi I/O）Flash Memory数据手册Generalplus规格书

描述 Description

The GPR25L1603E are 16,777,216 bit serial Flash memory, which is configured as 2,097,152 x 8 internally. When it is in two or four I/O read mode, the structure becomes 8,388,608 bits x 2 or 4,194,304 bits x 4. The GPR25L1603E feature a serial peripheral interface and software protocol allowing operation on a simple 3-wire bus.

特性 Features

•Serial Peripheral Interface compatible -- Mode 0 and Mode 3
•16,777,216 x 1 bit structure or 8,388,608 x 2 bits (two I/O read mode) structure or 4,194,304 x 4 bits (four I/O read mode) structure
•512 Equal Sectors with 4K byte each
•Any Sector can be erased individually

•32 Equal Blocks with 64K byte each
•Any Block can be erased individually

•Single Power Supply Operation
•2.7 to 3.6 volt for read, erase, and program operations

•Latch-up protected to 100mA from -1V to Vcc +1V
•High Performance
•Fast read
•1 I/O: 104MHz with 8 dummy cycles
•2 I/O: 85MHz with 4 dummy cycles
•4 I/O: 85MHz with 6 dummy cycles
•Fast access time: 104MHz serial clock
•Serial clock of four I/O read mode : 85MHz, which is equivalent to 340MHz
•Fast program time: 1.4ms(typ.) and 5ms(max.)/page (256-byte per page)
•Byte program time: 9us (typical)
•Fast erase time: 60ms (typ.)/sector (4K-byte per sector) ; 0.7s(typ.) /block (64K-byte per block); 14s(typ.) /chip

•Low Power Consumption
•Low active read current: 25mA(max.) at 104MHz and 10mA(max.) at 33MHz
•Low active programming current: 20mA (max.)
•Low active erase current: 20mA (max.)
•Low standby current: 25uA (max.)

•Typical 100,000 erase/program cycles
•20 years data retention