general purpose battery up to 8 years

文件：480.42 Kbytes 页数：2 Pages

CSB-BATTERY

希世比能源

Cells Per Unit 6 Voltage Per Unit 12

文件：724.12 Kbytes 页数：2 Pages

CSB-BATTERY

希世比能源

Valve Regulated Lead Acid Battery

文件：419.86 Kbytes 页数：1 Pages

CSB-BATTERY

希世比能源

OUTLINE 2-WAY

文件：66.97 Kbytes 页数：1 Pages

IPP

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 38A@ TC=25℃ · Drain Source Voltage -VDSS= 1000V(Min) · Static Drain-Source On-Resistance -RDS(on) = 220mΩ(Max)@VGS= 10V APPLICATIONS · DC-DC Converters · Battery Chargers · DC Choppers · High Speed Power Switching Application

文件：573.52 Kbytes 页数：3 Pages

ISC

无锡固电

EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT)

HIGH CURRENT APPLICATION. FEATURES • High hFE : hFE=100 ~ 320. • Complementary to KTC3204.

文件：113.63 Kbytes 页数：1 Pages

KEC

KEC(Korea Electronics)