GP401DDS18中文资料Low VCE(SAT) Dual Switch IGBT Module数据手册Dynex规格书

描述 Description

The Powerline range of high power modules includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A.
The GP401DDS18 is a dual switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. Designed with low VCE(SAT) to minimise conduction losses, the module is of particular relevance in low to medium frequency applications. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications.FEATURES
■ Low VCE(SAT)
■ Non Punch Through Silicon
■ Isolated Copper Baseplate
■ Low Inductance Internal ConstructionAPPLICATIONS
■ High Reliability Inverters
■ Motor Controllers
■ Traction Drives
■ Resonant Converters

特性 Features

■ Low VCE(SAT)
■ Non Punch Through Silicon
■ Isolated Copper Baseplate
■ Low Inductance Internal Construction