Low VCE(SAT) Half Bridge IGBT Module

The Powerline range of high power modules includes half bridge, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. FEATURES ■ Low VCE(SAT) ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Constructi

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Dynex

Low VCE(SAT) Half Bridge IGBT Module

The Powerline range of high power modules includes half bridge, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A.FEATURES\n■ Low VCE(SAT)\n■ Non Punch Through Silicon\n■ Isolated Copper Baseplate\n■ Low Inductance Internal Construction\n■ 200A Per A ■ Low VCE(SAT)\n■ Non Punch Through Silicon\n■ Isolated Copper Baseplate\n■ Low Inductance Internal Construction\n■ 200A Per Arm;

Dynex

丹尼克斯

Sharp反射式传感器
原封

Sharp反射式传感器

上传：深圳市正迈科技有限公司

SHARP/夏普
SMD

SHARP/夏普

上传：深圳市芯峰微电子科技有限公司

SHARP/夏普
SMD

SHARP/夏普

上传：深圳市芯峰微电子科技有限公司