GN1052WA2数据手册Semtech中文资料规格书

特性 Features

·Single +3.3V power supply
·Power dissipation =180mW (typ)
·Input Noise Density 10pA/√Hz
·Input noise current = 1 μA rms when used with a 0.2pF detector and 1nH input bond wire
·Transimpedance gain = 4k? into a 100? load (differential)
·Input current overload = 2.6mA pk (+1.1dBm for 1A/W responsivity - meets 10 Gigabit Ethernet specification)
·Upper Bandwidth (-3dB) = 13GHz
·Lower Bandwidth (-3dB) = 24kHz
·Operates at OC-192/STM-64 up to 11.3Gb/s NRZ rates
·Power supply rejection at 100kHz = 16dB
·Optimized for PIN photodiodes
·Can be used with APD (0.4pF) at 10Gb/s
·RSSI (Receive Signal Strength Indicator), current output operates from sensitivity to overload
·Constant photodiode reverse bias voltage = 2V (anode to input, cathode to VCC)
·Minimal external components, supply decoupling only
·Operating junction temperature range = -40 to +125°C