首页 >GMZJ6.8C>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SiliconEpitaxialPlanarZenerDiodeforStabilizer Features •Widespectrumfrom1.9Vthrough38Vofzenervoltageprovideflexibleapplication. •MPAKPackageissuitableforhighdensitysurfacemountingandhighspeedassembly. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconEpitaxialPlanarZenerDiodeforStabilizer | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconEpitaxialPlanarZenerDiodeforStabilizer | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconEpitaxialPlanarZenerDiodeforStabilizer | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconEpitaxialPlanarZenerDiodeforStabilizer Features •Widespectrumfrom1.9Vthrough38Vofzenervoltageprovideflexibleapplication. •MPAKPackageissuitableforhighdensitysurfacemountingandhighspeedassembly. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconEpitaxialPlanarZenerDiodeforStabilizer | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconPlanarZenerDiodeforSurgeAbsorb Features •HZM6.8ZMFAhasfourdevicesinamonolithic,andcanabsorbsurge. •Lowcapacitance(C=25pFmax)andcanprotectESDofsignalline. •MPAK-5Packageissuitableforhighdensitysurfacemountingandhighspeedassembly. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconPlanarZenerDiodeforSurgeAbsorb | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
SiliconPlanarZenerDiodeforSurgeAbsorb | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconEpitaxialPlanarZenerDiodeforSurgeAbsorb | HitachiHitachi Semiconductor 日立日立公司 | Hitachi |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|
