GLL4757

SURFACE MOUNT GLASS PASSIVATED ZENER

FEATURES ♦PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ♦Forsurfacemountedapplications ♦Glasspassivatedchipjunction ♦Lowzenerimpedance ♦Lowregulationfactor ♦Hightemperaturesolderingguaranteed:250°C/10secondsatterminals

GLL4757

Zener Diodes

FEATURES •PlasticpackagehasunderwriterslaboratoryflammabilityclassificationUL94V-0 •Forsurfacemountedapplications •Glasspassivatedchipjunction •LowZenerimpedance •Lowregulationfactor •Hightemperaturesolderingguaranteed: 250°C/10satterminals •Materialcatego

GLL4757

Zener Diodes

GLL4757A

Zener Diodes

FEATURES •PlasticpackagehasunderwriterslaboratoryflammabilityclassificationUL94V-0 •Forsurfacemountedapplications •Glasspassivatedchipjunction •LowZenerimpedance •Lowregulationfactor •Hightemperaturesolderingguaranteed: 250°C/10satterminals •Materialcatego

GLL4757A

SURFACE MOUNT SILICON ZENER DIODES

VOLTAGERANGE:3.3-100VPOWER:1.0Watts Features ●Lowleakagecurrent ●Highreliability ●Highpeakreversepowerdissipation ●Completevoltagerange3.3to100Volts

GLL4757A

1W 51V Zener diode

GLL4757A-E3/97

包装：卷带（TR） 封装/外壳：DO-213AB，MELF 类别：分立半导体产品 二极管 - 齐纳 - 单 描述：DIODE ZENER 51V 1W MELF

Vishay General Semiconductor - Diodes Division

GLL4757-E3/96

包装：卷带（TR） 封装/外壳：DO-213AB，MELF 类别：分立半导体产品 二极管 - 齐纳 - 单 描述：DIODE ZENER 51V 1W MELF

Vishay General Semiconductor - Diodes Division

GLL4757-E3/97

包装：散装 封装/外壳：DO-213AB，MELF 类别：分立半导体产品 二极管 - 齐纳 - 单 描述：DIODE ZENER 51V 1W MELF

Vishay General Semiconductor - Diodes Division

4757

LensRetainerClip

BZG4757

SiliconZ–Diodes

C4757

2500WATTS(AC)DC/DCSINGLEOUTPUT

Features •SingleOutput •6Ux28TEx306mm •Weight9.0kg

C4757

Signalprocessingcircuitfor2-DPSD

Signalprocessingcircuitfor2-DPSD Signalprocessingcircuitdesignedtofacilitateoperationof2-DPositionSensitiveDetector Features ●Nocomplicatedadjustmentrequired Positionmeasurementcanbemadesimplybymounting2-DPSD. ●Outputvoltagedirectlyrepresentingtheposi

CD4757A

ZENERDIODECHIPS

•ZENERDIODECHIPS •ALLJUNCTIONSCOMPLETELYPROTECTEDWITHSILICONDIOXIDE •ELECTRICALLYEQUIVALENTTO1N4728ATHRU1N4764A •1WATTCAPABILITYWITHPROPERHEATSINKING •COMPATIBLEWITHALLWIREBONDINGANDDIEATTACHTECHNIQUES,WITHTHEEXCEPTIONOFSOLDERREFLOW

CDLL4757A

1WATTZENERDIODES

•1WATTZENERDIODES •LEADLESSPACKAGEFORSURFACEMOUNT •DOUBLEPLUGCONSTRUCTION •METALLURGICALLYBONDED

CLL4757A

1.0WZENERDIODE5TOLERANCE

DESCRIPTION: TheCENTRALSEMICONDUCTORCLL4728ASeriesSiliconZenerDiodeisahighqualityvoltageregulatorforuseinsurfacemountindustrial,commercial,entertainmentandcomputerapplications. MARKING:CATHODEBAND

CLL4757A

SURFACEMOUNTSILICONZENERDIODE1WATT,3.3THRU100VOLTS

DESCRIPTION: TheCENTRALSEMICONDUCTORCLL4728ASeriesSiliconZenerDiodeisahighqualityvoltageregulatorforuseinsurfacemountindustrial,commercial,entertainmentandcomputerapplications. MARKING:CATHODEBAND

CZRA4757

SURFACEMOUNTZENERDIODE

Voltage:10-100VoltsPower:1.0Watts FEATURES -Forsurfacemountedapplicationsinordertooptimizeboardspace -Lowprofilepackage -Built-instrainrelief -Glasspassivatedjunction -Lowinductance -TypicalIRlessthan5.0uUAabove11V -Hightemperaturesoldering:260°C/10

CZRA4757

SURFACEMOUNTZENERDIODE

Voltage:10-100VoltsPower:1.0Watts FEATURES -Forsurfacemountedapplicationsinordertooptimizeboardspace -Lowprofilepackage -Built-instrainrelief -Glasspassivatedjunction -Lowinductance -TypicalIRlessthan5.0uUAabove11V -Hightemperaturesoldering:260°C/10

CZRA4757B-HF

SMDZenerDiode

Features -Glasspassivatedchip. -Lowleakage. -Foruseinstabilizingandclippingwithhighpowerrating. -Built-instrainrelief. -Lowinductance. -Highpeakreversepowerdissipation. Mechanicaldata -Case:JEDECDO-214AC,moldedplastic. -Epoxy:UL94V-0rateflameretardant.