Infrared Emitting Diode

■ Features 1. Narrow beam angle (∆θ : TYP. ± 13˚) 2. Radiant flux ( Φ e : MIN. 0.7mW at I F = 20mA) 3. Compact, high reliability by chip coating (GL480Q/GL483Q ) 4. Long lead type (GL483Q) ■ Applications 1. Copiers 2. Floppy disk drives 3. Optoelectronic switches

文件：45.38 Kbytes 页数：4 Pages

SHARPSharp Corporation

夏普

Package：径向；包装：卷带（TR）剪切带（CT） 类别：光电器件 LED 发射器 - 红外，紫外，可见光 描述：EMITTER IR 950NM 50MA RADIAL

Sharp Microelectronics

Silicon NPN Transistor RF Power Output for Broadband Amp, PO = 40W @ 512MHz

Description: The NTE480 is a 12.5 Volt epitaxial silicon NPN common emitter transistor designed for broadband applications in the 450 to 512MHz land mobile radio band. This device utilizes diffused emitter resistors to withstand infinite VSWR under operating conditions. Features: • Desi

文件：22.58 Kbytes 页数：2 Pages

NTE

Metal Oxide Varistors (MOV)

Description: The NTE Metal Oxide Varistors feature a barrier layer that gives the user fast response time. These devices have a high transient current handling capability when high voltage is applied. Static resistance is, however, very high under low voltage conditions, permitting low standby

文件：27.74 Kbytes 页数：3 Pages

NTE

Shottky barrier diode

Features High reliability Small mold type Low VF Application Small current rectification

文件：59.38 Kbytes 页数：2 Pages

ROHM

罗姆