PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR

Description The GL157 is designed for general purpose switching and amplifier applications. Features • -60 Volt VCEO • 3 Amp continuous current • Low saturation voltage

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GTM

勤益投资控股

P N P S I L I CO N P L A N A R H I G H P E R F O RM A N C E T R A N S I S T O R

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ETL

亚历电子

PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR

GTM

勤益投资控股

Quad 2-input multiplexer

DESCRIPTION The 74LVC157A is a high-performance, low-power, low-voltage, Si-gate CMOS device and superior to most advanced CMOS compatible TTL families. Inputs can be driven from either 3.3 or 5 V devices. This feature allows the use of these devices as translators in a mixed 3.3 and 5 V env

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PHI

PHI

MOS LINEAR RF POWER FET

Designed primarily for linear large–signal output stages to 80 MHz. • Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 21 dB (Typ) Efficiency = 45 (Typ)

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MOTOROLA

摩托罗拉

Silicon NPN Transistor Audio Power Amp, High Voltage Converter (Compl to NTE39)

Description: The NTE157 is a silicon NPN transistor in a TO126 type package designed for use in line–operated equipment such as audio output amplifiers, low–current, high–voltage converters, and AC line relays. Features: Excellent DC Current Gain: hFE = 30 to 250 @ IC = 100mA Curre

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NTE