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Low and stable contact resistance for reliable production yield

文件：356.79 Kbytes 页数：4 Pages

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Silicon N Channel Power MOS FET High Speed Power Switching

Features • For Automotive Application ( at Type Code “J “) • Low on-resistance • Capable of 4 V gate drive • High density mounting

文件：60.66 Kbytes 页数：10 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel Power MOS FET High Speed Power Switching

Features • For Automotive Application (at Type Code “J”) • Low on-resistance • Capable of 4 V gate drive • High density mounting

文件：101.05 Kbytes 页数：8 Pages

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